1999 Apr 14

4

Philips Semiconductors

Product specification

NPN high-voltage transistor

BF859

PACKAGE OUTLINE

UNIT

bp

L1

L2

(1)

max

L

cc1

E

PQ

w

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC

JEDEC

EIAJ

mm

0.8

0.6

0.65

0.5

0.56

0.46

8.6

8.4

10.1

9.9

10.4

10.0

2.54

13.3

12.2

e1

5.08

eHE

24.2

23.8

2.4

2.0

3.8

3.6

P1

3.9

3.7

0.25

1.7

1.5

DIMENSIONS (mm are the original dimensions)

2.5

SOT128B

TO-202

97-02-28

A

D

E

L1

L2

L

bp

c

E1

HE

P

Q

A

P1

4.6

4.4

Plastic single-ended leaded (through hole) package; with cooling fin, mountable to heatsink,

1 mounting hole; 3 leads (in-line)

SOT128B

e

e1

12

3

0

5

10 mm

scale

Note

1. Plastic flash allowed within this zone