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DS90LV027AH Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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DS90LV027AH Datasheet(HTML) 2 Page - National Semiconductor (TI) |
2 / 8 page Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage (V CC) −0.3V to +4V Input Voltage (DI) −0.3V to +3.6V Output Voltage (DO±) −0.3V to +3.9V Maximum Package Power Dissipation @ +25˚C M Package 1190 mW Derate M Package 9.5 mW/˚C above +25˚C Storage Temperature Range −65˚C to +150˚C Lead Temperature Range Soldering (4 sec.) +260˚C ESD Ratings (HBM 1.5 k Ω, 100 pF) ≥ 8kV (EIAJ 0 Ω, 200 pF) ≥ 1000V (CDM) ≥ 1000V (IEC direct 330 Ω, 150 pF) ≥ 4kV Recommended Operating Conditions Min Typ Max Units Supply Voltage (V CC) 3.0 3.3 3.6 V Temperature (T A) −40 25 +125 ˚C Electrical Characteristics Over Supply Voltage and Operating Temperature ranges, unless otherwise specified. (Notes 2, 3, 7) Symbol Parameter Conditions Pin Min Typ Max Units DIFFERENTIAL DRIVER CHARACTERISTICS V OD Output Differential Voltage R L = 100 Ω (Figure 1) DO+, DO− 250 360 450 mV ∆V OD V OD Magnitude Change 135 mV V OH Output High Voltage 1.4 1.6 V V OL Output Low Voltage 0.9 1.1 V V OS Offset Voltage 1.125 1.2 1.375 V ∆V OS Offset Magnitude Change 0 3 25 mV I OXD Power-off Leakage V OUT =VCC or GND, VCC =0V ±1 ±10 µA I OSD Output Short Circuit Current −5.7 −8 mA V IH Input High Voltage DI 2.0 V CC V V IL Input Low Voltage GND 0.8 V I IH Input High Current V IN = 3.3V or 2.4V ±2 ±10 µA I IL Input Low Current V IN = GND or 0.5V ±1 ±10 µA V CL Input Clamp Voltage I CL = −18 mA −1.5 −0.6 V I CC Power Supply Current No Load V IN =VCC or GND V CC 814 mA R L = 100 Ω 14 20 mA Switching Characteristics Over Supply Voltage and Operating Temperature Ranges, unless otherwise specified. (Notes 3, 4, 5, 6) Symbol Parameter Conditions Min Typ Max Units DIFFERENTIAL DRIVER CHARACTERISTICS t PHLD Differential Propagation Delay High to Low R L = 100 Ω,C L = 15 pF 0.3 0.8 2.0 ns t PLHD Differential Propagation Delay Low to High (Figure 2 and Figure 3) 0.3 1.1 2.0 ns t SKD1 Differential Pulse Skew |t PHLD −tPLHD| (Note 8) 0 0.3 0.7 ns t SKD2 Channel to Channel Skew (Note 9) 0 0.4 0.8 ns t SKD3 Differential Part to Part Skew (Note 10) 0 1.0 ns t SKD4 Differential Part to Part Skew (Note 11) 0 1.2 ns t TLH Transition Low to High Time 0.2 0.5 1.0 ns t THL Transition High to Low Time 0.2 0.5 1.0 ns f MAX Maximum Operating Frequency (Note 12) 350 MHz Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation. Note 2: Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground except VOD. Note 3: All typicals are given for: VCC = +3.3V and TA = +25˚C. Note 4: These parameters are guaranteed by design. The limits are based on statistical analysis of the device over PVT (process, voltage, temperature) ranges. Note 5: CL includes probe and fixture capacitance. www.national.com 2 |
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