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DS90LV027AH Datasheet(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part # DS90LV027AH
Description  High Temperature LVDS Dual Differential Driver
Download  8 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

DS90LV027AH Datasheet(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC)
−0.3V to +4V
Input Voltage (DI)
−0.3V to +3.6V
Output Voltage (DO±)
−0.3V to +3.9V
Maximum Package Power Dissipation @ +25˚C
M Package
1190 mW
Derate M Package
9.5 mW/˚C above +25˚C
Storage Temperature Range
−65˚C to +150˚C
Lead Temperature Range Soldering
(4 sec.)
+260˚C
ESD Ratings
(HBM 1.5 k
Ω, 100 pF)
≥ 8kV
(EIAJ 0
Ω, 200 pF)
≥ 1000V
(CDM)
≥ 1000V
(IEC direct 330
Ω, 150 pF)
≥ 4kV
Recommended Operating
Conditions
Min
Typ
Max
Units
Supply Voltage (V
CC)
3.0
3.3
3.6
V
Temperature (T
A)
−40
25
+125
˚C
Electrical Characteristics
Over Supply Voltage and Operating Temperature ranges, unless otherwise specified. (Notes 2, 3, 7)
Symbol
Parameter
Conditions
Pin
Min
Typ
Max
Units
DIFFERENTIAL DRIVER CHARACTERISTICS
V
OD
Output Differential Voltage
R
L = 100
(Figure 1)
DO+,
DO−
250
360
450
mV
∆V
OD
V
OD Magnitude Change
135
mV
V
OH
Output High Voltage
1.4
1.6
V
V
OL
Output Low Voltage
0.9
1.1
V
V
OS
Offset Voltage
1.125
1.2
1.375
V
∆V
OS
Offset Magnitude Change
0
3
25
mV
I
OXD
Power-off Leakage
V
OUT =VCC or GND, VCC =0V
±1
±10
µA
I
OSD
Output Short Circuit Current
−5.7
−8
mA
V
IH
Input High Voltage
DI
2.0
V
CC
V
V
IL
Input Low Voltage
GND
0.8
V
I
IH
Input High Current
V
IN = 3.3V or 2.4V
±2
±10
µA
I
IL
Input Low Current
V
IN = GND or 0.5V
±1
±10
µA
V
CL
Input Clamp Voltage
I
CL = −18 mA
−1.5
−0.6
V
I
CC
Power Supply Current
No Load
V
IN =VCC or GND
V
CC
814
mA
R
L = 100
14
20
mA
Switching Characteristics
Over Supply Voltage and Operating Temperature Ranges, unless otherwise specified. (Notes 3, 4, 5, 6)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DIFFERENTIAL DRIVER CHARACTERISTICS
t
PHLD
Differential Propagation Delay High to Low
R
L = 100
Ω,C
L = 15 pF
0.3
0.8
2.0
ns
t
PLHD
Differential Propagation Delay Low to High
(Figure 2 and Figure 3)
0.3
1.1
2.0
ns
t
SKD1
Differential Pulse Skew |t
PHLD −tPLHD| (Note 8)
0
0.3
0.7
ns
t
SKD2
Channel to Channel Skew (Note 9)
0
0.4
0.8
ns
t
SKD3
Differential Part to Part Skew (Note 10)
0
1.0
ns
t
SKD4
Differential Part to Part Skew (Note 11)
0
1.2
ns
t
TLH
Transition Low to High Time
0.2
0.5
1.0
ns
t
THL
Transition High to Low Time
0.2
0.5
1.0
ns
f
MAX
Maximum Operating Frequency (Note 12)
350
MHz
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices
should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.
Note 2: Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground except VOD.
Note 3: All typicals are given for: VCC = +3.3V and TA = +25˚C.
Note 4: These parameters are guaranteed by design. The limits are based on statistical analysis of the device over PVT (process, voltage, temperature) ranges.
Note 5: CL includes probe and fixture capacitance.
www.national.com
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