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SD101AW-GS18 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SD101AW-GS18 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 6 page www.vishay.com 2 Document Number 85679 Rev. 1.4, 16-Dec-05 SD101AW / 101BW / 101CW Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified 1) Valid provided that electrodes are kept at ambient temperature Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit Thermal resistance junction to ambient air RthJA 3001) K/W Junction temperature Tj 1251) °C Storage temperature range Tstg - 65 to + 150 °C Parameter Test condition Part Symbol Min Typ. Max Unit Reverse breakdown voltage IR = 10 μA SD101AW V(BR)R 60 V SD101BW V(BR)R 50 V SD101CW V(BR)R 40 V Leakage current VR = 50 V SD101AW IR 200 nA VR = 40 V SD101BW IR 200 nA VR = 30 V SD101CW IR 200 nA Forward voltage drop IF = 1 mA SD101AW VF 0.41 V SD101BW VF 0.40 V SD101CW VF 0.39 V IF = 15 mA SD101AW VF 1.0 V SD101BW VF 0.95 V SD101CW VF 0.90 V Diode capacitance VR = 0 V, f = 1 MHz SD101AW Ctot 2.0 pF SD101BW Ctot 2.1 pF SD101CW Ctot 2.2 pF Reverse recovery time IF = IR = 5 mA, recover to 0.1 IR trr 1 |
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Similar Description - SD101AW-GS18 |
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