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BF556C Datasheet(PDF) 6 Page - NXP Semiconductors |
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BF556C Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 11 page 1996 Jul 29 6 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF556A; BF556B; BF556C Fig.8 Typical output characteristics; BF556C. handbook, halfpage 048 16 25 0 20 MRC147 12 15 10 5 VDS (V) ID (mA) −1 V −2 V −3 V −4 V −5 V VGS = 0 V Fig.9 Typical input characteristics. handbook, halfpage −6 −4 −20 30 10 0 20 MRC148 VGS (V) ID (mA) BF556C BF556B BF556A VDS =15V. Fig.10 Drain current as a function of gate-source voltage; typical values. handbook, halfpage 0 −8 −6 −4 −2 103 102 1 10 10−1 10−2 10−3 MRC149 ID ( µA) VGS (V) BF556C BF556B BF556A VDS =15V. Fig.11 Gate current as a function of drain-gate voltage; typical values. handbook, halfpage −102 −10−2 −10−1 −1 −10 20 12 48 0 MRC151 16 VDG (V) IG (pA) ID = 10 mA IGSS 1 mA 0.1 mA ID = 10 mA only for BF556B and BF556C. |
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