CRYSTAL OSCILLATORS

Rev. A

357 Beloit Street, P.O. Box 457, Burlington, WI 53105-0457 U.S.A. Phone 262/763-3591 FAX 262/763-2881

www.nelfc.com

Data Sheet 0635D

Specifications

Condition

Min

Typ

Max

Unit

Note

OE-X8GXXXXX Series HF/UHF OCXO Low Power

Absolute Maximum Ratings

Input Break

Down Voltage

Vcc

-0.5

5.5

V

Storage temp.

Ts

-40

85

° C

Contr. Voltage

Vc

-1

9

V

Electrical

Frequency

Range

F

CMOS

Sine-wave

30

30

200

1,000

MHz

Input Voltage

Vcc

3.135

4.75

3.30

5.0

3.465

5.25

V

3

5

Input Current

Icc

90

160

mA

@ 100 MHz, 3.3V

@ 622 MHz, 3.3V

Frequency

Stability

ΔF/F

vs. Temperature

vs. Vcc

aging

±50

±2

±0.1

±0.5

ppb

ppb/V

ppm/year

ppm

See chart

First Year

15 years

Calibration

ΔF/F

As shipped, 25ºC

±0.1

ppm

Load

CMOS

Sine

15pF/10KOhm

Internally AC-coupled 50 Ohm

Duty cycle

@50%

45

50

55

%

CMOS

Rise/Fall time

Tr/Tf

20 to 80 %

3

ns

CMOS

Logic "1" level

Voh

CMOS

0.9Vcc

V

Logic "0" level

Vol

CMOS

0.1Vcc

V

Output power

P

Sinewave Into 50

Ohm

0

4

3

7

dBm

3.3V

5.0V

Start up time

Ts

2

10

ms

Phase jitter

1

σ

0.4

0.2

1

0.4

ps

100 Hz to 20 MHz

12 KHz to 20 MHz

Subharmonics

Sine

CMOS, Sine

-45

-40

none

dBc

F>250MHz

F< 250 MHz

Spurious

-60

dBc

Harmonics

Sine-wave

-30

-25

dBc

SSB Phase Noise

@10 Hz

@100 Hz

@1 KHz

@10 KHz

@100 KHz

-100

-125

-140

-160

-165

dBc/Hz

@100 MHz

SSB Phase Noise

@10 Hz

@100 Hz

@1 KHz

@10 KHz

@100 KHz

-80

-100

-120

-145

-150

dBc/Hz

@622 MHz;

Sine

Input

Impedance

> 10KOhm

Control voltage

Vc

0

3.3

V

Modulation

bandwidth

MB

100 Hz

Contact Factory for

wider MB

Deviation

Vc=0V to 3.3V,25°C

±0.5

±1.0

ppm