AD8667 datasheet(3/4 Pages) AD

Part #	AD8667

Description	16V, 250 A Low Power, Low Noise Dual Precision CMOS Rail-to-Rail Output Operational Amplifiers

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Manufacturer	AD [Analog Devices]

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Preliminary Technical Data

AD8667

Rev. PrA | Page 3 of 4

ELECTRICAL CHARACTERISTICS

(VS=16V, VCM = VS/2, TA=+25°C unless otherwise noted)

Parameter

Symbol

Conditions

Min

Typ

Max

Units

INPUT CHARACTERISTICS

Offset Voltage

VOS

VSY = 8V, VCM = 3V

100

μV

VCM = -0.1V to +14.0V

30

300

μV

-40°< TA < +85°C

650

μV

-40°< TA < +125°C

750

μV

Input Bias Current

IB

0.3

1

pA

-40°< TA < +85°C

50

pA

-40°< TA < +125°C

300

pA

Input Offset Current

IOS

0.2

pA

-40°< TA < +85°C

20

pA

-40°< TA < +125°C

75

pA

Input Voltage Range

IVR

-0.1

14

V

Common-Mode Rejection Ratio

CMRR

VCM = -0.1V to +14.0V

80

95

dB

Large Signal Voltage Gain

AVO

RL=2 kΩ VO= 0.5V to+15.5V

70

85

V/mV

Offset Voltage Drift

ΔVOS/ΔT

3

μV/°C

OUTPUT CHARACTERISTICS

Output Voltage High

VOH

IL = 1mA

15.8

15.9

V

IL = 10mA

15

15.2

V

-40°C < TA < +125°C

14.7

V

Output Voltage Low

VOL

IL = 1mA

51

80

mV

IL = 10mA

550

mV

-40°C < TA < +125°C

900

mV

Short Circuit Current

ISC

±10

mA

Closed Loop Output Impedance

ZOUT

f=100 kHz, AV = 1

100

Ω

POWER SUPPLY

Power Supply Rejection Ratio

PSRR

VS = 5V to 16V

80

95

dB

Supply Current/Amplifier

ISY

VO = 0V

250

μA

-40°< TA < +125°C

325

μA

DYNAMIC PERFORMANCE

Slew Rate

SR

RL =2 kΩ

0.3

V/

μs

Settling Time

ts

To 0.1%, 0 V to 1V step

μs

Gain Bandwidth Product

GBP

550

kHz

Phase Margin

Øo

60

degrees

NOISE PERFORMANCE

Peak-to-Peak Noise

en p-p

f=0.1Hz to 10 Hz

3.5

μV p-p

Voltage Noise Density

en

f=1kHz

23

nV/

√Hz

Voltage Noise Density

en

f=10kHz

20

nV/

√Hz

Current Noise Density

in

f=1kHz

pA/

√Hz

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