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BF545B Datasheet(PDF) 3 Page - NXP Semiconductors |
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BF545B Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 12 page 1996 Jul 29 3 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF545A; BF545B; BF545C LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage −±30 V VGSO gate-source voltage open drain −−30 V VGDO gate-drain voltage (DC) open source −−30 V IG forward gate current (DC) − 10 mA Ptot total power dissipation up to Tamb =25 °C; note 1 − 250 mW Tstg storage temperature −65 150 °C Tj operating junction temperature − 150 °C Fig.2 Power derating curve. handbook, halfpage 0 50 100 200 400 300 100 0 200 150 MBB688 Ptot (mW) Tamb (°C) |
Similar Part No. - BF545B |
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Similar Description - BF545B |
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