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HAT2198R-EL-E Datasheet(PDF) 3 Page - Renesas Technology Corp |
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HAT2198R-EL-E Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 8 page HAT2198R Rev.2.00, Oct.18.2004, page 3 of 7 Main Characteristics Ambient Temperature Ta (°C) Power vs. Temperature Derating 4.0 3.0 2.0 1.0 0 50 100 150 200 Test Condition : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW < 10 s Drain to Source Voltage VDS (V) Maximum Safe Operation Area Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm) 100 10 1 0.1 0.01 0.1 0.3 1 3 10 30 100 500 Ta = 25 °C 1 shot Pulse PW = 10 m s 10 µ s 100 µs Operation in this area is limited by RDS(on) Note 5 DC Operation (PW < 10 s) 1 ms Drain to Source Voltage VDS (V) Typical Output Characteristics 20 16 12 8 4 0 24 6 8 10 VGS = 2.4 V 10 V 3 V Pulse Test 2.6 V Gate to Source Voltage VGS (V) Typical Transfer Characteristics 20 16 12 8 4 0 12 3 4 5 Tc = 75 °C 25 °C –25 °C VDS = 10 V Pulse Test Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 300 240 180 120 60 0 4 8 12 16 20 Pulse Test ID = 20 A 5 A 10 A Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current 20 10 2 5 1 1 10 100 1000 100 50 V = 4.5 V GS 10 V Pulse Test 2.8 V |
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