PTH04T230W datasheet(4/35 Pages) TI

Part #	PTH04T230W

Description	6-A, 2.2-V to 5.5-V INPUT, NON-ISOLATED, WIDE-OUTPUT, ADJUSTABLE POWER MODULE WITH TurboTrans

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Manufacturer	TI [Texas Instruments]

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ELECTRICAL CHARACTERISTICS

PTH04T230W, PTH04T231W

SLTS271A – SEPTEMBER 2006 – REVISED OCTOBER 2006

PTH04T230W

T

A =25°C, VI = 5 V, VO = 3.3 V, CI = 330 µF, CO1 = 100 µF ceramic, CO2 = 150 µF non-ceramic, and IO = IO max (unless

otherwise stated)

PARAMETER

TEST CONDITIONS

PTH04T230W

UNIT

MIN

TYP

MAX

IO

Output current

Over VO range

25

°C, natural convection

0

6

A

0.69

≤ V

O≤ 1.7

2.2

5.5

VI

Input voltage range

Over IO range

V

1.7 < VO≤ 3.6

VO+0.5(1)

5.5

Output adjust range

Over IO range

0.69

3.6

V

Set-point voltage tolerance

±0.5

±1.0 (2)

%Vo

Temperature variation

–40

°C < T

A < 85°C

±0.3

%Vo

VO

Line regulaltion

Over VI range

±2

mV

Load regulation

Over IO range

±2

mV

Total output variation

Includes set-point, line, load, –40

°C ≤ T

A ≤ 85°C

±1.5 (2)

%VO

RSET = 1.21 kΩ, VO = 3.3 V

94%

RSET = 2.38 kΩ, VO = 2.5 V

92%

RSET = 4.78 kΩ, VO = 1.8 V

90%

η

Efficiency

IO = 6 A

RSET = 7.09 kΩ, VO = 1.5 V

89%

RSET = 12.1 kΩ, VO = 1.2 V

87%

RSET = 20.8 kΩ, VO = 1.0 V

85%

RSET = 689 kΩ, VO = 0.7 V

81%

VO Ripple (peak-to-peak)

20-MHz bandwidth

1

%VO

ILIM

Overcurrent threshold

Reset, followed by auto-recovery

10

A

w/o TurboTrans

Recovery Time

100

µSec

CO1 = 100 µF, ceramic

CO2 = 150 µF,

VO Overshoot

100

mV

non-ceramic

2.5 A/µs load step

w/o TurboTrans (3)

Recovery Time

120

µSec

50% to 100% IOmax

Transient response

CO1 = 100 µF, ceramic

VI = 3.3 V

VO Overshoot

60

mV

CO2 = 990 µF, Type B

VO = 2.5 V

with TurboTrans

Recovery Time

180

µSec

CO1 = 100 µF, ceramic

CO2 = 990 µF, Type B

VO Overshoot

35

mV

RTT = 1.54 kΩ

IIL

Track input current (pin 9)

Pin to GND

-130 (4)

µA

dVtrack/dt

Track slew rate capability

CO ≤ CO (max)

1

V/ms

VI increasing, RUVLO = OPEN

1.95

2.19

Adjustable Under-voltage lockout

UVLOADJ

VI decreasing, RUVLO = OPEN

1.3

1.5

V

(pin 10)

Hysteresis, RUVLO≤ 52.3 kΩ

0.5

Input high voltage (VIH)

Open(5)

V

Inhibit control (pin 10)

Input low voltage (VIL)

-0.2

0.6

Input low current (IIL), Pin 10 to GND

125

µA

Iin

Input standby current

Inhibit (pin 10) to GND, Track (pin 9) open

5

mA

f s

Switching frequency

Over VI and IO ranges, SmartSync (pin 1) to GND

300

kHz

fSYNC

Synchronization (SYNC) frequency

240

400

kHz

VSYNCH

SYNC High-Level Input Voltage

2

5.5

V

VSYNCL

SYNC Low-Level Input Voltage

0.8

V

tSYNC

SYNC Minimum Pulse Width

200

nSec

(1)

The minimum input voltage is 2.2 V or (VO + 0.5) V, whichever is greater.

(2)

The set-point voltage tolerance is affected by the tolerance and stability of RSET. The stated limit is unconditionally met if RSET has a

tolerance of 1% with 200 ppm/°C or better temperature stability.

(3)

Without TurboTrans, the minimum ESR limit of 7 m

Ω must not be violated.

(4)

A low-leakage (<100 nA), open-drain device, such as MOSFET or voltage supervisor IC, is recommended to control pin 9. The

open-circuit voltage is less than VI.

(5)

This control pin has an internal pull-up. Do not place an external pull-up on this pin. If it is left open-circuit, the module operates when

input power is applied. A small, low-leakage (<100 nA) MOSFET is recommended for control. The open-circuit voltage is less than 3.5

Vdc. For additional information, see the related application information section.

4

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