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PTH04T230W Datasheet(PDF) 6 Page - Texas Instruments |
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PTH04T230W Datasheet(HTML) 6 Page - Texas Instruments |
6 / 35 page www.ti.com ELECTRICAL CHARACTERISTICS PTH04T230W, PTH04T231W SLTS271A – SEPTEMBER 2006 – REVISED OCTOBER 2006 PTH04T231W (Ceramic Capacitors) T A = 25°C, VI = 5 V, VO = 3.3 V, CI = 300 µF ceramic, CO = 300 µF ceramic, and IO = IO max (unless otherwise stated) PARAMETER TEST CONDITIONS PTH04T231W UNIT MIN TYP MAX IO Output current Over VO range 25 °C, natural convection 0 6 A 0.69 ≤ V O≤ 1.7 2.2 5.5 VI Input voltage range Over IO range V 1.7 < VO≤ 3.6 VO+0.5(1) 5.5 VOADJ Output voltage adjust range Over IO range 0.69 3.6 V Set-point voltage tolerance ±0.5 ±1 (2) %Vo Temperature variation –40 °C < T A < 85°C ±0.3 %Vo VO Line regulaltion Over VI range ±2 mV Load regulation Over IO range ±2 mV Total output variation Includes set-point, line, load, –40 °C ≤ T A ≤ 85°C ±1.5 (2) %Vo RSET = 1.21 kΩ, VO = 3.3 V 94% RSET = 2.38 kΩ, VO = 2.5 V 92% RSET = 4.78 kΩ, VO = 1.8 V 90% η Efficiency IO = 6 A RSET = 7.09 kΩ, VO = 1.5 V 89% RSET = 12.1 kΩ, VO = 1.2 V 87% RSET = 20.8 kΩ, VO = 1.0 V 85% RSET = 689 kΩ, VO = 0.7 V 81% VO Ripple (peak-to-peak) 20-MHz bandwidth 1 %VO ILIM Overcurrent threshold Reset, followed by auto-recovery 10 A Recovery time 100 µs w/o TurboTrans CO= 300 µF, Type A VO over/undershoot 70 mV 2.5 A/µs load step w/o TurboTrans Recovery time 100 µs 50 to 100% IOmax CO= 800 µF, Type A Transient response mV VI = 3.3 V VO over/undershoot 55 RTT = open VO = 2.5 V w/ TurboTrans Recovery time 150 µs CO= 800 µF, Type A mV VO over/undershoot 35 RTT = 11.3 kΩ IIL Track input current (pin 9) Pin to GND –130(3) µA dVtrack/dt Track slew rate capability CO ≤ CO (max) 1 V/ms VI increasing, RUVLO = OPEN 1.95 2.19 Adjustable Under-voltage lockout UVLOADJ Vi decreasing, RUVLO = OPEN 1.3 1.5 V (pin 10) Hysteresis, RUVLO = OPEN 0.5 Input high voltage (VIH) Open(4) V Inhibit control (pin 10) Input low voltage (VIL) -0.2 0.8 Input low current (IIL ), Pin 10 to GND -235 µA Iin Input standby current Inhibit (pin 10) to GND, Track (pin 9) open 5 mA f s Switching frequency Over VI and IO ranges, SmartSync (pin 1) to GND 300 kHz Synchronization (SYNC) fSYNC 240 400 kHz frequency VSYNCH SYNC High-Level Input Voltage 2 5.5 V VSYNCL SYNC Low-Level Input Voltage 0.8 V tSYNC SYNC Minimum Pulse Width 200 nSec CI External input capacitance Ceramic 300 (5) µF (1) The minimum input voltage is 2.2 V or (VO + 0.5) V, whichever is greater. (2) The set-point voltage tolerance is affected by the tolerance and stability of RSET. The stated limit is unconditionally met if RSET has a tolerance of 1% with 100 ppm/°C or better temperature stability. . (3) A low-leakage (<100 nA), open-drain device, such as MOSFET or voltage supervisor IC, is recommended to control pin 9. The open-circuit voltage is less than VI. (4) This control pin has an internal pull-up. Do not place an external pull-up on this pin. If it is left open-circuit, the module operates when input power is applied. A small, low-leakage (<100 nA) MOSFET is recommended for control. The open-circuit voltage is less than 3.5 Vdc. For additional information, see the related application note. (5) 300 µF of ceramic input capacitance is required for proper operation. 6 Submit Documentation Feedback |
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