1996 Jul 30

2

Philips Semiconductors

Product specification

N-channel silicon field-effect transistors

BF245A; BF245B; BF245C

FEATURES

• Interchangeability of drain and source connections

• Frequencies up to 700 MHz.

APPLICATIONS

• LF, HF and DC amplifiers.

DESCRIPTION

General purpose N-channel symmetrical junction

field-effect transistors in a plastic TO-92 variant package.

CAUTION

The device is supplied in an antistatic package. The

gate-source input must be protected against static

discharge during transport or handling.

PINNING

PIN

SYMBOL

DESCRIPTION

1

d

drain

2

s

source

3

g

gate

Fig.1

Simplified outline (TO-92 variant)

and symbol.

handbook, halfpage

1

3

2

MAM257

s

d

g

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

drain-source voltage

−−±30

V

gate-source cut-off voltage

−0.25

−−8V

gate-source voltage

open drain

−−−30

V

drain current

BF245A

2

−

6.5

mA

BF245B

6

−

15

mA

BF245C

12

−

25

mA

total power dissipation

−−

300

mW

forward transfer admittance

3

−

6.5

mS

reverse transfer capacitance

−

1.1

−

pF