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BF1105 Datasheet(PDF) 7 Page - NXP Semiconductors |
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BF1105 Datasheet(HTML) 7 Page - NXP Semiconductors |
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7 / 16 page  1997 Dec 02 7 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1105; BF1105R; BF1105WR Fig.12 Input admittance as a function of frequency; typical values. VDS = 5 V; VG2-S =4V. ID = 12 mA; Tamb =25 °C. handbook, halfpage MGM251 102 10−2 10 102 103 10−1 1 10 f (MHz) yis (mS) gis bis Fig.13 Reverse transfer admittance and phase as a function of frequency; typical values. VDS = 5 V; VG2-S =4V. ID = 12 mA; Tamb =25 °C. handbook, halfpage MGM252 103 102 10 1 10 102 103 f (MHz) |yrs| ( µS) ϕrs (deg) −103 −1 −10 −102 ϕrs |yrs| Fig.14 Forward transfer admittance and phase as a function of frequency; typical values. VDS = 5 V; VG2-S =4V. ID = 12 mA; Tamb =25 °C. handbook, halfpage MGM253 102 ϕfs (deg) −102 −1 −10 10 1 10 102 103 f (MHz) |yfs| (mS) ϕfs |yfs| Fig.15 Output admittance as a function of frequency; typical values. VDS = 5 V; VG2-S =4V. ID = 12 mA; Tamb =25 °C. handbook, halfpage MGM254 10 1 10−1 10−2 10 102 103 f (MHz) yos (mS) bos gos |
Similar Part No. - BF1105 |
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Similar Description - BF1105 |
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