BDX45 datasheet(4/8 Pages) PHILIPS

Part #	BDX45

Description	PNP Darlington transistors

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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4 / 8 page

1997 Jul 02

4

Philips Semiconductors

Product speciﬁcation

PNP Darlington transistors

BDX45; BDX47

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

BDX45

IE = 0; VCB = −60 V

−−−100 nA

BDX47

IE = 0; VCB = −90 V

−−−100 nA

ICES

collector cut-off current

BDX45

VBE = 0; VCE = −45 V

−−−50

nA

BDX47

VBE = 0; VCE = −80 V

−−−50

nA

IEBO

emitter cut-off current

IC = 0; VEB = −4V

−−−50

nA

hFE

DC current gain

VCE = −10 V; see Fig. 2

IC = −150 mA

1000

−−

IC = −500 mA

2000

−−

VCEsat

collector-emitter saturation

voltage

IC = −500 mA; IB = −0.5 mA

−−−1.3

V

IC = −500 mA; IB = −0.5 mA; Tj = 150 °C

−−−1.3

V

IC = −1 A; IB = −4mA

−−−1.6

V

IC = −1 A; IB = −4 mA; Tj = 150 °C

−−−1.6

V

VBEsat

base-emitter saturation voltage

IC = −500 mA; IB = −0.5 mA

−−−1.9

V

IC = −1 A; IB = −4mA

−−−2.2

V

fT

transition frequency

IC = −500 mA; VCE = −5 V; f = 100 MHz

−

200

−

MHz

Switching times (between 10% and 90% levels); see Fig.3

ton

turn-on time

ICon = −500 mA; IBon = −0.5 mA;

IBoff = 0.5 mA

−−

500

ns

td

delay time

−−

200

ns

tr

rise time

−−

300

ns

toff

turn-off time

−−

700

ns

ts

storage time

−−

550

ns

tf

fall time

−−

150

ns

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