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STD16NF06L-1 Datasheet(PDF) 4 Page - STMicroelectronics |
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STD16NF06L-1 Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 11 page 2 Electrical characteristics STD16NF06 4/11 Note: 1 Value limited by wire bonding 2 Garanted when external Rg=4.7 Ω and tf < tfmax. 3Starting TJ = 25°C, ID = 19A, VDD = 18V 4 Pulse width limited by safe operating area 5 Pulsed: pulse duration = 300µs, duty cycle 1.5% Table 6. Source drain diode Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM Note 4 Source-drain Current Source-drain Current (pulsed) 16 64 A A VSD Note 5 Forward on Voltage ISD = 8A VGS = 0 1.5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 16A, di/dt = 100A/µs, VDD = 20V, TJ =150°C Figure 15 on page 7 49 78 3.2 ns µC A |
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