MW4IC2230GNBR1 datasheet(7/16 Pages) FREESCALE

Part #	MW4IC2230GNBR1

Description	RF LDMOS Wideband Integrated Power Amplifiers

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Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

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MW4IC2230NBR1 MW4IC2230GNBR1

7

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

24

33

50

2

Actual

P1dB = 45.3 dBm (34 W)

Ideal

Pin, INPUT POWER (dBm)

Figure 9. Output Power versus Input Power

VDD = 28 Vdc

IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA,

Pulsed CW, 8

μsec(on), 1 msec(off)

f = 2140 MHz

P3dB = 46.3 dBm (43 W)

49

48

47

46

45

44

43

42

41

40

39

38

37

36

35

34

6

4

8

10

12

14

16

18

20

22

2300

1.50

2.00

1950

f, FREQUENCY (MHz)

Figure 10. Delay versus Frequency

VDD = 28 Vdc, Small Signal

IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA

1.95

1.90

1.80

1.75

1.70

1.65

1.60

1.55

2000

2050

2100

2150

2200

2250

190

1.E+09

90

100

110

120

130

140

150

160

170

180

1.E+08

1.E+05

1.E+04

TJ, JUNCTION TEMPERATURE (°C)

Figure 11. MTTF Factor versus Temperature Junction

This above graph displays calculated MTTF in hours x ampere2

drain current. Life tests at elevated temperatures have correlated to

better than

±10% of the theoretical prediction for metal failure. Divide

MTTF factor by ID2 for MTTF in a particular application.

3rd Stage

2nd Stage

1st Stage

1.E+07

1.E+06

1.85

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MW4IC2230GNBR1 Datasheet(PDF) 7 Page - Freescale Semiconductor, Inc

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