2

RF Device Data

Freescale Semiconductor

MW4IC2230NBR1 MW4IC2230GNBR1

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

-0.5, +65

Vdc

Gate-Source Voltage

-0.5, +8

Vdc

Storage Temperature Range

-65 to +175

°C

Operating Channel Temperature

200

°C

Input Power

20

dBm

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

Stage 1

Stage 2

Stage 3

10.5

5.1

2.3

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

2 (Minimum)

Machine Model

M3 (Minimum)

Charge Device Model

C5 (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

3

260

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain

29

31.5

—

dB

Input Return Loss

IRL

—

-25

-10

dB

Adjacent Channel Power Ratio

ACPR

—

—

-53.5

-52

-50

—

dBc

Saturated Pulsed Output Power

(f = 1 kHz, Duty Cycle 10%)

—

43

—

W

—

±5

—

%

Gain Flatness in 30 MHz Bandwidth

—

0.13

—

dB

Deviation from Linear Phase in 30 MHz Bandwidth

Φ

—

±1

—

°

Delay

—

1.6

—

ns

Part-to-Part Phase Variation

ΔΦ

—

±15

—

°

1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf. Select

Documentation/Application Notes - AN1977.

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