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BC856F Datasheet(PDF) 3 Page - NXP Semiconductors |
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BC856F Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 May 21 3 Philips Semiconductors Preliminary specification PNP general purpose transistors BC856F; BC857F; BC858F series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Transistor mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC856AF; BC856BF −−80 V BC857AF; BC857BF; BC857CF −−50 V BC858AF; BC858BF; BC858CF −−30 V VCEO collector-emitter voltage open base BC856AF; BC856BF −−65 BC857AF; BC857BF; BC857CF −−45 BC858AF; BC858BF; BC858CF −−30 VEBO emitter-base voltage open collector −−5V IC collector current (DC) −−100 mA ICM peak collector current −−200 mA IBM peak base current −−100 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
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