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BUV47 Datasheet(PDF) 2 Page - Bourns Electronic Solutions |
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BUV47 Datasheet(HTML) 2 Page - Bourns Electronic Solutions |
2 / 7 page BUV47, BUV47A NPN SILICON POWER TRANSISTORS 2 PRODU CT INFORMA TION AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VCEO(sus) Collector-emitter sustaining voltage IC = 200 mA L = 25 mH (see Note 2) BUV47 BUV47A 400 450 V V(BR)EBO Base-emitter breakdown voltage IE = 50 mA IC = 0 (see Note 3) 7 30 V ICES Collector-emitter cut-off current VCE = 850 V VCE = 1000 V VCE = 850 V VCE = 1000 V VBE =0 VBE =0 VBE =0 VBE =0 TC = 125°C TC = 125°C BUV47 BUV47A BUV47 BUV47A 0.15 0.15 1.5 1.5 mA ICER Collector-emitter cut-off current VCE = 850 V VCE = 1000 V VCE = 850 V VCE = 1000 V RBE =10 Ω RBE =10 Ω RBE =10 Ω RBE =10 Ω TC = 125°C TC = 125°C BUV47 BUV47A BUV47 BUV47A 0.4 0.4 3.0 3.0 mA IEBO Emitter cut-off current VEB = 5 V IC =0 1 mA VCE(sat) Collector-emitter saturation voltage IB = 1 A IB = 2.5 A IC = 5A IC = 8A (see Notes 3 and 4) 1.5 3.0 V VBE(sat) Base-emitter saturation voltage IB = 1 A IC = 5A (see Notes 3 and 4) 1.6 V ft Current gain bandwidth product VCE = 10 V IC = 0.5 A f = 1 MHz 8 MHz Cob Output capacitance VCB = 20 V IC = 0 f = 0.1 MHz 105 pF thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 1°C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT ton Turn on time IC = 5 A VCC = 150 V IB(on) = 1 A (see Figures 1 and 2) IB(off) = -1 A 1.0 µs ts Storage time 3.0 µs tf Fall time 0.8 µs inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT tsv Voltage storage time IC = 5 A TC = 100°C IB(on) = 1 A (see Figures 3 and 4) VBE(off) = -5 V 4.0 µs tfi Current fall time 0.4 µs |
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