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BC635-16 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BC635-16 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1999 Apr 23 2 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages of audio/video amplifiers. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC636, BC638 and BC640. PINNING PIN DESCRIPTION 1 base 2 collector 3 emitter Fig.1 Simplified outline (TO-92; SOT54) and symbol. handbook, halfpage1 3 2 MAM259 2 1 3 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC635 − 45 V BC637 − 60 V BC639 − 100 V VCEO collector-emitter voltage open base BC635 − 45 V BC637 − 60 V BC639 − 80 V VEBO emitter-base voltage open collector − 5V IC collector current (DC) − 1A ICM peak collector current − 1.5 A IBM peak base current − 200 mA Ptot total power dissipation Tamb ≤ 25 °C − 0.83 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
Similar Part No. - BC635-16 |
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Similar Description - BC635-16 |
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