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TISP7240F3DR-S Datasheet(PDF) 2 Page - Bourns Electronic Solutions |
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TISP7240F3DR-S Datasheet(HTML) 2 Page - Bourns Electronic Solutions |
2 / 19 page MARCH 1994 - REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Description (continued) TISP7xxxF3 (MV, HV) Overvoltage Protector Series Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) Each terminal pair has a symmetrical voltage-triggered thyristor characteristic. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides.These protectors are guaranteed to voltage limit and withstand the listed lightning surges in both polarities. These medium and high voltage devices are offered in nine voltage variants to meet a range of battery and ringing voltage requirements. They are guaranteed to suppress and withstand the listed international lightning surges on any terminal pair. Similar devices with working voltages of 58 V and 66 V are detailed in the TISP7072F3, TISP7082F3 data sheet. Rating Symbol Value Unit Repetitive peak off-state voltage, 0 °C < TA < 70 °C ‘7125F3 ‘7150F3 ‘7180F3 ‘7240F3 ‘7260F3 ‘7290F3 ‘7320F3 ‘7350F3 ‘7380F3 VDRM 100 120 145 180 200 220 240 275 270 V Non-repetitive peak on-state pulse current (see Notes 1 and 2) IPPSM A 1/2 (Gas tube differential transient, 1/2 voltage wave shape) 330 2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 190 1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 Ω resistor) 100 8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 175 10/160 (FCC Part 68, 10/160 voltage wave shape) 110 4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous) 95 0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape) 70 5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single) 70 5/320 (FCC Part 68, 9/720 voltage wave shape, single) 70 10/560 (FCC Part 68, 10/560 voltage wave shape) 50 10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) 45 Non-repetitive peak on-state current, 0 °C < TA < 70 °C (see Notes 1 and 3) 50 Hz, 1 s D Package SL Package ITSM 4.3 7.1 A Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A diT/dt 250 A/µs Junction temperature TJ -65 to +150 °C Storage temperature range Tstg -65 to +150 °C NOTES: 1. 2. See Thermal Information for derated IPPSM values 0 °C < TA < 70 °C and Applications Information for details on wave shapes. 3. Above 70 °C, derate ITSM linearly to zero at 150 °C lead temperature. Initially, the TISP device must be in thermal equilibrium at the specified T . The impulse may be repeated after the TISP device returns to its initial conditions. The rated current values may be applied either to the R to G or to the T to G or to the T to R terminals. Additionally, both R to G and T to G may have their rated current values applied simultaneously (In this case the total G terminal current will be twice the above rated current values). A ® ® |
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