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TISP4040L1AJR-S Datasheet(PDF) 2 Page - Bourns Electronic Solutions |
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TISP4040L1AJR-S Datasheet(HTML) 2 Page - Bourns Electronic Solutions |
2 / 15 page AUGUST 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP40xxL1AJ/BJ VLV Overvoltage Protectors Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) Rating Symbol Value Unit Repetitive peak off-state voltage ‘4015 ‘4030 ‘4040 VDRM ±8 ±15 ± 25 V Non-repetitive peak on-state pulse current (see Notes 1 and 2) ITSP A 2/10 µs(Telcordia GR-1089-CORE, 2/10 µs voltage wave shape) 8/20 µs (IEC 61000-4-5, comb ination wave generator, 1.2/50 voltage, 8/20 current) 10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 5/310 µs (ITU-T K.20/45/21, 10/700 µs voltage wave shape) 5/320 µs(FCC Part 68, 9/720 µs voltage wave shape) 10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 10/1000 µs(Telcordia GR-1089-CORE, 10/1000 µs voltage wave shape) ± 150 ± 120 ± 65 ± 45 ± 45 ± 35 ± 30 Non-repetitive peak on-state current (see Notes 1 and 2) ITSM A 20 ms (50 Hz) full sine wave 16.7 ms (60 Hz) full sine wave 0.2 s 50 Hz/60 Hz a.c. 2s 50 Hz/60Hz a.c. 1000 s 50 Hz/60 Hz a.c. 20 22 13 5 1.8 Initial rate of rise of current (2/10 waveshape) di/d t 130 A/µs Maximum junction temperature TJM 150 °C Storage temperature range Tstg -65 to +150 °C NOTES: 1. Initially, the device must be in thermal equilibrium with TJ =25 °C. 2. The surge may be repeated after the device returns to its initial conditions. Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) Parameter Test Conditions Min Typ Max Unit IDRM Repetitive peak off- state current VD =VDRM ±5 µA V(BO) Breakover voltage di/dt = ±0.8 A/ms ‘4015 ‘4030 ‘4040 ±15 ±30 ±40 V V(BO) Impulse breakover voltage dv/dt = ±1000 V/µs, Linear voltage ramp, Maximum ramp value = ±500 V di/dt = ±5A/µs, Linear current ramp, Maximum ramp value = ±10 A ‘4015 ‘4030 ‘4040 ±34 ±50 ±63 V I(BO) Breakover current di/dt = ±0.8 A/ms ±0.8 A ID Off-state current VD = ± 6V VD = ± 13 V VD = ± 22 V ‘4015 ‘4030 ‘4040 ±2 µA IH Holding current IT = ±5A, di/dt= +/-30mA/ms ±50 mA |
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