NOVEMBER 2001 - REVISED FEBRUARY 2005

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP43xxMMAJ/BJ Overvoltage Protector Series

Description (Continued)

Overload Ratings, TA = 25 °C (Unless Otherwise Noted)

Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)

The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until

the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the

current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the

diverted current subsides.

This TISP43xxMM range consists of three voltage variants targeted at specific applications: ADSL, electro-mechanical hook switch and solid

state hook switch modems. These parts are guaranteed to voltage limit and withstand the listed international lightning surges in both

polarities. Two packages are available; SMB (JEDEC DO-214AA with J-bend leads) and SMA (JEDEC DO-214AC with J-bend leads). These

devices are supplied in embossed tape reel carrier pack. For alternative voltage and holding current values, consult the factory.

Rating

Symbol

Value

Unit

Repetitive peak off-state voltage,

‘4300

‘4350

‘4360

±230

±275

±290

V

Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)

A

2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)

250

10/160 µs (FCC Part 68 (TIA/EIA-IS-968), 10/160 µs voltage wave shape)

75

5/320 µs (FCC Part 68 (TIA/EIA-IS-968), 9/720 µs voltage wave shape)

65

5/310 µs (ITU-T K.44, 10/700 µs voltage wave shape used in K.20/45/21)

65

10/560 µs (FCC Part 68 (TIA/EIA-IS-968), 10/560 µs voltage wave shape)

55

10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)

50

Non-repetitive peak on-state current (see Notes 2, 3 and 4)

18

7

1.6

A

20 ms (50 Hz) full sine wave

1 s (50 Hz) full sine wave

1000 s 50 Hz/60 Hz a.c.

Junction temperature

-40 to +150

°C

Storage temperature range

-65 to +150

°C

NOTES: 1. For voltage values at lower temperatures derate at 0.13 %/°C.

3. The surge may be repeated after the TISP43xxMM returns to its initial conditions.

4. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring

track widths. Derate current values at -0.61 %/°C for ambient temperatures above 25 °C.

Rating

Symbol

Value

Unit

Peak overload on-state current, Type A impulse (see Note 5)

200

100

A

10/160 µs

10/560 µs

Peak overload on-state current, a.c. power cross tests UL 60950 (see Note 5)

See Figure 10

for current

versus time

A

NOTE

5: These electrical stress levels may damage the TISP43xxMM silicon chip. After test, the pass criterion is either that the device is

functional or, if it is faulty, that it has a short circuit fault mode. In the short circuit fault mode, the following equipment is protected

as the device is a permanent short across the line. The equipment would be unprotected if an open circuit fault mode developed.