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TISP4600F3LMR-S Datasheet(PDF) 2 Page - Bourns Electronic Solutions |
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TISP4600F3LMR-S Datasheet(HTML) 2 Page - Bourns Electronic Solutions |
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2 / 11 page  NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) TISP4600F3, TISP4700F3 Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) Recommended Operating Conditions Rating Symbol Value Unit Repetitive peak off-state voltage TISP4600F3 TISP4700F3 VDRM ± 420 ± 500 V Non-repetitive peak on-state pulse current (see Notes 1 and 2) IPPSM A 2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 190 1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 Ω resistor) 100 8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 175 10/160 (FCC Part 68, 10/160 voltage wave shape) 110 4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous) 95 5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single) 70 5/320 (FCC Part 68, 9/720 voltage wave shape, single) 70 10/560 (FCC Part 68, 10/560 voltage wave shape) 50 10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) 45 Non-repetitive peak on-state current (see Notes 1 and 2) ITSM 6A 50/60 Hz, 1 s Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A diT/dt 250 A/µs Junction temperature TJ -40 to +150 °C Storage temperature range Tstg -65 to +150 °C NOTES: 1. Initially, the TISP must be in thermal equilibrium with TJ =25 °C. 2. These non-repetitive rated currents are peak values of either polarirty. The surge may be repeated after the TISP returns to its initial conditions. Component Min Typ Max Unit R1, R2 Series resistor for GR-1089-CORE first-level surge survival Series resistor for ITU-T recommendation K.20 and K.21 Series resistor for FCC Part 68 9/720 survival Series resistor for FCC Part 68 10/160, 10/560 survival 15 0 0 10 Ω Parameter Test Conditions Min Typ Max Unit IDRM Repetitive peak off- state current VD = ±VDRM ±5 µA V(BO) Breakover voltage dv/dt = ±700 V/ms, RSOURCE = 300 Ω TISP4600F3 TISP4700F3 ±600 ±700 V I(BO) Breakover current dv/dt = ±700 V/ms, R SOURCE = 300 Ω ±0.1 A IH Holding current IT = ±5A, di/dt= +/-30mA/ms ±0.15 A dv/dt Critical rate of rise of off-state voltage Linear voltage ramp, Maximum ramp value < 0.85V DRM ±5 kV/µs ID Off-state current VD = ±50 V ±10 µA Coff Off-state capacitance f= 100 kHz, Vd =1V rms, V V D =0, f= 100 kHz, Vd =1V rms, D =-50 V 44 11 74 20 pF |
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