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BB809 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BB809 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 4 page 1996 May 03 2 Philips Semiconductors Product specification VHF variable capacitance diode BB809 FEATURES • High linearity • Matched to 3% • Hermetically sealed leaded glass SOD68 (DO-34) package • C28: 4.7 pF; ratio: 9 • Low series resistance. APPLICATIONS • Electronic tuning in VHF television tuners, band A up to 160 MHz • VCO. DESCRIPTION The BB809 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) package. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT VR continuous reverse voltage − 30 V IF continuous forward current − 20 mA Tstg storage temperature −55 +150 °C Tj operating junction temperature −55 +100 °C Fig.1 Simplified outline (SOD68; DO-34) and symbol. handbook, halfpage MAM159 k a Cathode side indicated by a yellow band on a black body. ELECTRICAL CHARACTERISTICS Tj =25 °C; unless otherwise specified. Note 1. VR is the value at which Cd = 25 pF. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IR reverse current VR = 28 V; see Fig.3 −− 10 nA VR = 28 V; Tj =85 °C; see Fig.3 −− 200 nA rs diode series resistance f = 200 MHz; note 1 −− 0.6 Ω Cd diode capacitance VR = 1 V; f = 1 MHz; see Figs 2 and 4 39 − 46 pF VR = 28 V; f = 1 MHz; see Figs 2 and 4 4 − 5pF capacitance ratio f = 1 MHz 8 − 10 capacitance matching VR = 0.5 to 28 V −− 3% C d1V () C d28V () -------------------- C d ∆ C d ---------- |
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