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TISP4095M3BJR-S Datasheet(PDF) 3 Page - Bourns Electronic Solutions |
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TISP4095M3BJR-S Datasheet(HTML) 3 Page - Bourns Electronic Solutions |
3 / 15 page NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. The TISP4xxxM3BJ range consists of nineteen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These medium (M) current protection devices are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed tape reel pack. For alternative voltage and holding current values, consult the factory. For higher rated impulse currents in the SMB package, the 100 A 10/1000 TISP4xxxH3BJ series is available. TISP4xxxM3BJ Overvoltage Protector Series Description (continued) Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) Rating Symbol Value Unit Repetitive peak off-state voltage, (see Note 1) ‘4070 ‘4080 ‘4095 ‘4115 ‘4125 ‘4145 ‘4165 ‘4180 ‘4200 ‘4220 ‘4240 ‘4250 ‘4265 ‘4290 ‘4300 ‘4350 ‘4360 ‘4395 ‘4400 VDRM ± 58 ± 65 ± 75 ± 90 ±100 ±120 ±135 ±145 ±155 ±160 ±180 ±190 ±200 ±220 ±230 ±275 ±290 ±320 ±300 V Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4) ITSP A 2/10 µs(GR-1089-CORE, 2/10 µs voltage wave shape) 300 8/20 µs (IEC 61000-4-5,combination wave generator, 1.2/50 voltage, 8/20 current) 220 10/160 µs(FCC Part 68, 10/160 µs voltage wave shape) 120 5/200 µs(VDE 0433, 10/700 µs voltage wave shape) 110 0.2/310 µs (I3124, 0.5/700 µs voltage wave shape) 100 5/310 µs(ITU-T K.20/21/45, K.44 10/700 µs voltage wave shape) 100 5/310 µs(FTZ R12, 10/700 µs voltage wave shape) 100 10/560 µs(FCC Part 68, 10/560 µs voltage wave shape) 75 10/1000 µs(GR-1089-CORE, 10/1000 µs voltage wave shape) 50 Non-repetitive peak on-state current (see Notes 2, 3 and 5) ITSM 30 32 2.1 A 20 ms (50 Hz) full sine wave 16.7 ms (60 Hz) full sine wave 1000 s 50 Hz/60 Hz a.c. Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 100 A diT/dt 300 A/µs Junction temperature TJ -40 to +150 °C Storage temperature range Tstg -65 to +150 °C NOTES: 1. See Applications Information and Figure 11 for voltage values at lower temperatures. 2. Initially,theTISP4xxxM3BJ must be in thermal equilibrium with TJ =25 °C. 3. The surge may be repeated after the TISP4xxxM3BJ returns to its initial conditions. 4. See Applications Information and Figure 12 for current ratings at other temperatures. 5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. See Figure 9 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient temperatures above 25 ° C. |
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