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BD646 Datasheet(PDF) 1 Page - Bourns Electronic Solutions |
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BD646 Datasheet(HTML) 1 Page - Bourns Electronic Solutions |
1 / 5 page BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS P R O D UCT INFORMA TION 1 MAY 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. 4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V. RATING SYMBOL VALUE UNIT Collector-base voltage (IE = 0) BD646 BD648 BD650 BD652 VCBO -80 -100 -120 -140 V Collector-emitter voltage (IB = 0) BD646 BD648 BD650 BD652 VCEO -60 -80 -100 -120 V Emitter-base voltage VEBO -5 V Continuous collector current IC -8 A Peak collector current (see Note 1) ICM -12 A Continuous base current IB -0.3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 62.5 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2W Unclamped inductive load energy (see Note 4) ½LIC 2 50 mJ Operating junction temperature range Tj -65 to +150 °C Storage temperature range Tstg -65 to +150 °C Lead temperature 3.2 mm from case for 10 seconds TL 260 °C B C E TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA 1 2 3 |
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