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BD646 Datasheet(PDF) 1 Page - Bourns Electronic Solutions

Part # BD646
Description  PNP SILICON POWER DARLINGTONS
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Manufacturer  BOURNS [Bourns Electronic Solutions]
Direct Link  http://www.bourns.com
Logo BOURNS - Bourns Electronic Solutions

BD646 Datasheet(HTML) 1 Page - Bourns Electronic Solutions

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BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
P R O D UCT
INFORMA TION
1
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Designed for Complementary Use with
BD645, BD647, BD649 and BD651
62.5 W at 25°C Case Temperature
8 A Continuous Collector Current
Minimum hFE of 750 at 3V, 3 A
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (IE = 0)
BD646
BD648
BD650
BD652
VCBO
-80
-100
-120
-140
V
Collector-emitter voltage (IB = 0)
BD646
BD648
BD650
BD652
VCEO
-60
-80
-100
-120
V
Emitter-base voltage
VEBO
-5
V
Continuous collector current
IC
-8
A
Peak collector current (see Note 1)
ICM
-12
A
Continuous base current
IB
-0.3
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
62.5
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
2W
Unclamped inductive load energy (see Note 4)
½LIC
2
50
mJ
Operating junction temperature range
Tj
-65 to +150
°C
Storage temperature range
Tstg
-65 to +150
°C
Lead temperature 3.2 mm from case for 10 seconds
TL
260
°C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3


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