BD543B datasheet(2/5 Pages) BOURNS

Part #	BD543B

Description	NPN SILICON POWER TRANSISTORS

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Manufacturer	BOURNS [Bourns Electronic Solutions]

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BD543, BD543A, BD543B, BD543C

NPN SILICON POWER TRANSISTORS

2

PRODU CT

INFORMA TION

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)CEO

Collector-emitter

breakdown voltage

IC = 30 mA

(see Note 4)

IB = 0

BD543

BD543A

BD543B

BD543C

40

60

80

100

V

ICES

Collector-emitter

cut-off current

VCE = 40 V

VCE = 60 V

VCE = 80 V

VCE =100 V

VBE =0

BD543

BD543A

BD543B

BD543C

0.4

mA

ICEO

Collector cut-off

current

VCE = 30 V

VCE = 60 V

IB =0

BD543/543A

BD543B/543C

0.7

mA

IEBO

Emitter cut-off

current

VEB =

5 V

IC =0

1

mA

hFE

Forward current

transfer ratio

VCE =

4 V

VCE =

4 V

VCE =

4 V

IC = 1 A

IC =

3 A

IC =

5 A

(see Notes 4 and 5)

60

40

15

VCE(sat)

Collector-emitter

saturation voltage

IB =

0.3 A

IB =

1 A

IB =

1.6 A

IC =

3A

IC =

5A

IC =

8A

(see Notes 4 and 5)

0.5

1

V

VBE

Base-emitter

voltage

VCE =

4 V

IC = 5 A

(see Notes 4 and 5)

1.4

V

hfe

Small signal forward

current transfer ratio

VCE = 10 V

IC = 0.5 A

f = 1 kHz

20

|h

fe|

Small signal forward

current transfer ratio

VCE = 10 V

IC = 0.5 A

f = 1 MHz

3

thermal characteristics

PARAMETER

MIN

TYP

MAX

UNIT

RθJC

Junction to case thermal resistance

1.79

°C/W

RθJA

Junction to free air thermal resistance

62.5

°C/W

resistive-load-switching characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS †

MIN

TYP

MAX

UNIT

ton

Turn-on time

IC = 6 A

VBE(off) = -4 V

IB(on) = 0.6 A

RL = 5 Ω

IB(off) = -0.6 A

tp = 20 µs, dc ≤ 2%

0.6

µs

toff

Turn-off time

1µs

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