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BAV70T Datasheet(PDF) 3 Page - NXP Semiconductors |
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BAV70T Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 12 page  1997 Dec 19 3 Philips Semiconductors Product specification High-speed double diode BAV70T ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode VF forward voltage see Fig.3 IF = 1 mA 0.715 V IF = 10 mA 0.855 V IF =50mA 1 V IF = 150 mA 1.25 V IR reverse current see Fig.5 VR = 25 V 30 nA VR =75V 2 µA VR = 25 V; Tj = 150 °C60 µA VR = 75 V; Tj = 150 °C 100 µA Cd diode capacitance VR = 0; f = 1 MHz; see Fig.6 1.5 pF trr reverse recovery time switching from IF = 10 mA to IR =10mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 4ns Vfr forward recovery voltage switched to IF = 10 mA; tr = 20 ns; see Fig.8 1.75 V SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-s thermal resistance from junction to soldering point one diode loaded 350 K/W |
Similar Part No. - BAV70T |
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Similar Description - BAV70T |
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