BAV10 datasheet(3/7 Pages) PHILIPS

Part #	BAV10

Description	High-speed diode

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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3 / 7 page

1996 Sep 16

3

Philips Semiconductors

Product speciﬁcation

High-speed diode

BAV10

ELECTRICAL CHARACTERISTICS

Tj =25 °C; unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed circuit-board without metallization pad.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VF

forward voltage

see Fig.3

IF =10mA

−

750

mV

IF = 200 mA

−

1.0

V

IF = 500 mA

−

1.25

V

IF = 200 mA; Tj = 100 °C

−

950

mV

IR

reverse current

see Fig.5

VR =60V

−

100

nA

VR =60V; Tj = 150 °C

−

100

µA

Cd

diode capacitance

f = 1 MHz; VR = 0; see Fig.6

−

2.5

pF

trr

reverse recovery time

when switched from IF = 400 mA to

IR = 400 mA; RL = 100 Ω;

measured at IR = 40 mA; see Fig.7

−

6ns

Vfr

forward recovery voltage

when switched from IF = 400 mA;

tr = 30 ns; see Fig.8

−

2V

when switched from IF = 400 mA;

tr = 10 ns; see Fig.8

−

1.5

V

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

lead length 10 mm

240

K/W

Rth j-a

thermal resistance from junction to ambient

lead length 10 mm; note 1

500

K/W

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