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BAV10 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BAV10 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 7 page 1996 Sep 16 3 Philips Semiconductors Product specification High-speed diode BAV10 ELECTRICAL CHARACTERISTICS Tj =25 °C; unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on a printed circuit-board without metallization pad. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage see Fig.3 IF =10mA − 750 mV IF = 200 mA − 1.0 V IF = 500 mA − 1.25 V IF = 200 mA; Tj = 100 °C − 950 mV IR reverse current see Fig.5 VR =60V − 100 nA VR =60V; Tj = 150 °C − 100 µA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 − 2.5 pF trr reverse recovery time when switched from IF = 400 mA to IR = 400 mA; RL = 100 Ω; measured at IR = 40 mA; see Fig.7 − 6ns Vfr forward recovery voltage when switched from IF = 400 mA; tr = 30 ns; see Fig.8 − 2V when switched from IF = 400 mA; tr = 10 ns; see Fig.8 − 1.5 V SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 240 K/W Rth j-a thermal resistance from junction to ambient lead length 10 mm; note 1 500 K/W |
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