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BAS82 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BAS82 Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 8 page  1998 Jun 24 4 Philips Semiconductors Product specification Schottky barrier diodes BAS81; BAS82; BAS83 GRAPHICAL DATA Fig.2 Forward current as a function of forward voltage; typical values. handbook, halfpage 1.0 0 10 I F 2 MGC690 10 (mA) 1 (1) (2) (3) 10 −1 0.2 0.4 0.6 0.8 V F (V) (1) (2) (3) (1) Tamb =85 °C. (2) Tamb =25 °C. (3) Tamb = −40 °C. Fig.3 Reverse current as a function of reverse voltage; typical values. handbook, halfpage 10 4 10 (nA) I R 3 10 2 10 10−2 10−1 60 20 0 MGC689 40 V R (V) 1 (1) (2) (3) (1) Tamb =85 °C. (2) Tamb =25 °C. (3) Tamb = −40 °C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz. 0 0.5 1.0 1.5 2.0 0 153045 60 MGC688 Cd (pF) V (V) R |
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