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BAS56 Datasheet(PDF) 4 Page - NXP Semiconductors

Part # BAS56
Description  High-speed double diode
Download  8 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAS56 Datasheet(HTML) 4 Page - NXP Semiconductors

  BAS56 Datasheet HTML 1Page - NXP Semiconductors BAS56 Datasheet HTML 2Page - NXP Semiconductors BAS56 Datasheet HTML 3Page - NXP Semiconductors BAS56 Datasheet HTML 4Page - NXP Semiconductors BAS56 Datasheet HTML 5Page - NXP Semiconductors BAS56 Datasheet HTML 6Page - NXP Semiconductors BAS56 Datasheet HTML 7Page - NXP Semiconductors BAS56 Datasheet HTML 8Page - NXP Semiconductors  
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1996 Sep 10
4
Philips Semiconductors
Product specification
High-speed double diode
BAS56
ELECTRICAL CHARACTERISTICS
Tj =25 °C; unless otherwise specified.
Note
1. Tamb =25 °C; device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VF
forward voltage
see Fig.3; IF = 200 mA; DC value;
note 1
1.0
V
IR
reverse current
see Fig.5
VR =60V
100
nA
VR =60V; Tj = 150 °C
100
µA
IR
reverse current
series connection
VR = 120 V
100
nA
VR = 120 V; Tj = 150 °C
100
µA
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
2.5
pF
trr
reverse recovery time
when switched from IF = 400 mA to
IR = 400 mA; RL = 100 Ω;
measured at IR = 40 mA; see Fig.7
6ns
Vfr
forward recovery voltage
when switched from IF = 400 mA;
tr = 30 ns; see Fig.8
2.0
V
when switched from IF = 400 mA;
tr = 100 ns; see Fig.8
1.5
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
360
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W


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