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BAS4 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BAS4 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1999 May 28 2 Philips Semiconductors Product specification Low-leakage diode BAS45AL FEATURES • Continuous reverse voltage: max. 125 V • Repetitive peak forward current: max. 625 mA • Low reverse current: max. 1 nA • Switching time: typ. 1.5 µs. APPLICATION • Low leakage current applications. DESCRIPTION Epitaxial medium-speed switching diode with a low leakage current in a small SOD80C glass SMD package. Fig.1 Simplified outline (SOD80C) and symbol. handbook, 4 columns MAM061 ka LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on a FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 125 V VR continuous reverse voltage − 125 V IF continuous forward current note 1; see Fig.2 − 250 mA IFRM repetitive peak forward current − 625 mA IFSM non-repetitive peak forward current square wave; Tj =25 °C prior to surge; see Fig.4 tp =1 µs − 4A tp =1ms − 1A tp =1s − 0.5 A Ptot total power dissipation Tamb =25 °C; note 1 − 400 mW Tstg storage temperature −65 +175 °C Tj junction temperature − 175 °C |
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