BAS40-05W datasheet(3/8 Pages) PHILIPS

Part #	BAS40-05W

Description	Schottky barrier double diodes

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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3 / 8 page

1999 Apr 26

3

Philips Semiconductors

Product speciﬁcation

Schottky barrier (double) diodes

BAS40W series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

ELECTRICAL CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp = 300 µs; δ = 0.02.

THERMAL CHARACTERISTICS

Note

1. Refer to SOT323 standard mounting conditions.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

VR

continuous reverse voltage

−

40

V

IF

continuous forward current

−

120

mA

IFRM

repetitive peak forward current

tp ≤ 1s; δ≤ 0.5

−

120

mA

IFSM

non-repetitive peak forward current

tp < 10 ms

−

200

mA

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

Per diode

VF

continuous forward voltage

see Fig.6

IF = 1 mA

380

mV

IF = 10 mA

500

mV

IF =40mA

1

V

IR

continuous reverse current

VR = 30 V; note 1; see Fig.7

1

µA

VR = 40 V; note 1; see Fig.7

10

µA

τ

charge carrier life time

IF = 5 mA; Krakauer method

100

ps

Cd

diode capacitance

VR = 0; f = 1 MHz; see Fig.9

5

pF

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

625

K/W

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