 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
BAS321 Datasheet(PDF) 3 Page - NXP Semiconductors |
|
||||||||||||||||||||||||||||||
BAS321 Datasheet(HTML) 3 Page - NXP Semiconductors |
|
|
3 / 12 page  1999 Feb 09 3 Philips Semiconductors Product specification General purpose diode BAS321 ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. THERMAL CHARACTERISTICS Notes 1. Soldering point of cathode tab. 2. Device mounted on an FR4 printed circuit board. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage see Fig. 3 IF = 100 mA 1 V IF = 200 mA 1.25 V IR reverse current see Fig. 5 VR = 200 V 100 nA VR = 200 V; Tj = 150 °C 100 µA Cd diode capacitance f = 1 MHz; VR = 0; see Fig. 6 2 pF trr reverse recovery time when switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA; see Fig.8 50 ns SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-s thermal resistance from junction to soldering point Ts =90°C; note 1 130 K/W Rth j-a thermal resistance from junction to ambient note 2 366 K/W |
Similar Part No. - BAS321 |
|
Similar Description - BAS321 |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.COM |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
