BAS31 datasheet(4/12 Pages) PHILIPS

Part #	BAS31

Description	General purpose controlled avalanche double diodes

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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4 / 12 page

1999 May 21

4

Philips Semiconductors

Product speciﬁcation

General purpose controlled avalanche

(double) diodes

BAS29; BAS31; BAS35

ELECTRICAL CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

Note

1. Device mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

VF

forward voltage

see Fig.3

IF =10mA

−

750

mV

IF =50mA

−

840

mV

IF = 100 mA

−

900

mV

IF = 200 mA

−

1V

IF = 400 mA

−

1.25

V

IR

reverse current

see Fig.5

VR =90V

−

100

nA

VR =90V; Tj = 150 °C

−

100

µA

V(BR)R

reverse avalanche breakdown

voltage

IR = 1 mA

120

170

V

Cd

diode capacitance

f = 1 MHz; VR = 0; see Fig.6

−

35

pF

trr

reverse recovery time

when switched from IF = 30 mA to

IR = 30 mA; RL = 100 Ω;

measured at IR = 3 mA; see Fig.7

−

50

ns

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

360

K/W

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

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