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BAS16 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BAS16 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 12 page  1999 May 26 3 Philips Semiconductors Product specification High-speed diode BAS16 ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage see Fig.3 IF = 1 mA 715 mV IF = 10 mA 855 mV IF =50mA 1 V IF = 150 mA 1.25 V IR reverse current see Fig.5 VR =25V 30 nA VR =75V 1 µA VR =25V; Tj = 150 °C30 µA VR =75V; Tj = 150 °C50 µA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 1.5 pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 4ns Vfr forward recovery voltage when switched from IF = 10 mA; tr = 20 ns; see Fig.8 1.75 V SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 330 K/W Rth j-a thermal resistance from junction to ambient note 1 500 K/W |
Similar Part No. - BAS16 |
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Similar Description - BAS16 |
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