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BAS12 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BAS12 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 7 page 1996 Sep 26 4 Not recommended for new designs Philips Semiconductors Product specification Controlled avalanche rectifiers BAS11; BAS12 GRAPHICAL DATA Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). handbook, halfpage 0 0.6 IF(AV) (A) 0.4 0.2 0 40 200 MGD293 80 120 160 Ttp ( oC) Lead length 10 mm. a = 1.57; VR =VRRMmax; δ = 0.5. Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). handbook, halfpage 0 IF(AV) (A) 40 200 0.4 0.3 0.1 0 0.2 80 120 160 Tamb (°C) MGD295 Device mounted as shown in Fig.8. a = 1.57; VR =VRRMmax; δ = 0.5. Fig.4 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. a=IF(RMS)/IF(AV); VR =VRRMmax; δ = 0.5. handbook, halfpage 0 0.1 0.2 0.4 0.5 2.5 1.57 P (W) 0 0.4 MGD292 0.3 IF(AV)(A) 0.3 0.2 0.1 1.42 a = 3 2 Solid line: Tj =25 °C. Dotted line: Tj = 150 °C. Fig.5 Forward current as a function of forward voltage; maximum values. handbook, halfpage 012 VF (V) 3 5 IF (A) 0 4 MGD294 3 2 1 |
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