Electronic Components Datasheet Search |
|
BAP64-04 Datasheet(PDF) 3 Page - NXP Semiconductors |
|
BAP64-04 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 7 page 1999 Jun 16 3 Philips Semiconductors Preliminary specification Silicon PIN diode BAP64-04 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per diode VF forward voltage IF =50mA − 0.95 1.1 V IR reverse leakage current VR = 175 V −− 10 µA VR =20V −− 1 µA Cd diode capacitance VR =0; f = 1MHz − 0.52 − pF VR =1V; f=1MHz − 0.37 0.5 pF VR =20V; f=1MHz − 0.23 0.35 pF rD diode forward resistance IF = 0.5 mA; f = 100 MHz; note 1 − 20 40 Ω IF = 1 mA; f = 100 MHz; note 1 − 10 20 Ω IF = 10 mA; f = 100 MHz; note 1 − 23.8 Ω IF = 100 mA; f = 100 MHz; note 1 − 0.7 1.35 Ω τL charge carrier life time when switched from IF =10mA to IR =6 mA; RL = 100 Ω; measured at IR =3mA − 1.55 −µs LS series inductance − 1.4 − nH THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering point 220 K/W |
Similar Part No. - BAP64-04 |
|
Similar Description - BAP64-04 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |