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R LI M NA R Y NOTES : 1. 300us Pulse Width, 2% Duty Cycle. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. Thermal Resistance Junction to Case. MBR1670CT thru 16100CT MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency High current capability, low VF High surge capacity Plastic package has UL flammability classification 94V-0 For use in low voltage,high frequency inverters,free whelling,and polarity protection applications MECHANICAL DATA Case : TO-220AB molded plastic Polarity : As marked on the body Weight : 0.08 ounces, 2.24 grams Mounting position : Any TO-220AB All Dimensions in millimeter TO-220AB DIM. MIN. MAX. A C D E F G H B 14.22 15.88 10.67 9.65 2.54 3.43 6.86 5.84 8.26 9.28 - 6.35 12.70 14.73 0.51 2.79 N M L K J I 1.14 2.29 0.64 0.30 3.53 4.09 3.56 4.83 1.14 1.40 2.92 2.03 PIN 1 PIN 3 PIN 2 CASE A B C K J I H G F E D N M L H PIN 13 2 SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 70 to 100 Volts FORWARD CURRENT - 16 Amperes 16 125 10000 MBR1670CT 70 49 70 MBR16100CT 100 70 100 MBR1690CT 90 63 90 MBR1680CT 80 56 80 VRMS VDC VRRM I(AV) IFSM Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC METHOD) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage TJ Operating Temperature Range C TSTG Storage Temperature Range C Typical Thermal Resistance (Note 3) R0JC C/W CJ Typical Junction Capacitance, per element (Note 2) pF IR Maximum DC Reverse Current at Rated DC Blocking Voltage @TJ =25 C @TJ =125 C mA A A V UNIT V V CHARACTERISTICS SYMBOL VF Maximum Forward Voltage, (Note 1) V Voltage Rate of Change (Rated VR) @IF=8A @IF=8A @IF=16A @IF=16A dv/dt Maximum Average Forward RectifiedCurrent at TC=100 C (See Fig.1) TJ =25 C TJ =125 C TJ =25 C TJ =125 C -55 to +150 -55 to +175 2.0 0.1 100 0.85 0.75 0.95 0.85 275 V/us SEMICONDUCTOR LITE-ON REV. 2-PRE, 13-Sep-2001, KTHC14 |
