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NGA-386 Datasheet(PDF) 1 Page - Stanford Microdevices |
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NGA-386 Datasheet(HTML) 1 Page - Stanford Microdevices |
1 / 7 page EDS-101103 Rev C 1 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com Preliminary Preliminary Product Description NGA-386 DC-5000 MHz, Cascadable GaAs HBT MMIC Amplifier Product Features • High Gain: 18.9dB at 1950Mhz • Cascadable 50 ohm: 1.2:1 VSWR • Patented GaAs HBT Technology • Operates from Single Supply • Low Thermal Resistance Package • Unconditionally Stable Applications • Cellular, PCS, CDPD • Wireless Data, SONET l o b m y S : s n o i t i d n o C t s e T : s r e t e m a r a P Z 0 I , s m h O 0 5 = D C º 5 2 = T , A m 5 3 = s t i n U . n i M . p y T . x a M P B d 1 n o i s s e r p m o C B d 1 t a r e w o P t u p t u O z H M 0 5 8 = f z H M 0 5 9 1 = f z H M 0 0 4 2 = f m B d m B d m B d 5 . 4 1 0 . 5 1 6 . 5 1 P I 3 t n i o P t p e c r e t n I r e d r O d r i h T m B d 0 = e n o t r e p t u o r e w o P z H M 0 5 8 = f z H M 0 5 9 1 = f z H M 0 0 4 2 = f m B d m B d m B d 8 . 5 2 0 . 7 2 0 . 7 2 S 1 2 n i a G l a n g i S ll a m S z H M 0 5 8 = f z H M 0 5 9 1 = f z H M 0 0 4 2 = f B d B d B d 9 . 0 2 9 . 8 1 0 . 8 1 h t d i w d n a Bh t d i w d n a B B d 3 z H M0 0 0 2 S 1 1 R W S V t u p n Iz H M 0 0 0 5 - C D = f- 1 : 2 . 1 S 2 2 R W S V t u p t u Oz H M 0 0 0 5 - C D = f- 1 : 3 . 1 S 2 1 n o i t a l o s I e s r e v e R z H M 0 5 8 = f z H M 0 5 9 1 = f z H M 0 0 4 2 = f B d B d B d 4 . 3 2 2 . 2 2 6 . 1 2 F Ne r u g i F e s i o Nz H M 0 0 0 2 = fB d7 . 2 V D e g a t l o V e c i v e D V0 . 4 R h t l - j ,) d a e l - n o i t c n u j ( e c n a t s i s e R l a m r e h T W / C º4 4 1 Stanford Microdevices’ NGA-386 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance up to 5 Ghz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. 0 5 10 15 20 25 01 23 4 567 dB Small Signal Gain vs. Frequency Frequency GHz |
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