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SA56606-29 Datasheet(PDF) 4 Page - NXP Semiconductors |
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SA56606-29 Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 12 page  Philips Semiconductors Product data SA56606-XX CMOS system reset 2001 Jun 19 4 DC ELECTRICAL CHARACTERISTICS Characteristics measured with Tamb = 25 °C, unless otherwise specified. SYMBOL PARAMETER CONDITIONS TEST CIRCUIT MIN. TYP. MAX. UNIT VS Reset detection threshold VS – 2% VS VS + 2% V ∆VS Hysteresis VDD = 0 V → VS + 1.0 V → 0 V 1 VS × 0.03 VS × 0.05 VS × 0.08 V VS/∆T Threshold voltage temperature coefficient –40 °C ≤ Tamb ≤ +85 °C 1 Fig. 17 – ±0.01 – %/ °C ICC Supply current VDD = VS + 1.0 V – 0.25 1.0 µA IOH IDS leakage current when OFF VDD = VDS = 10 V – – 0.1 µA IDS1 N-channel IDS output sink current 1 VDS = 0.5 V; VDD = 1.2 V –0.23 –1.4 – mA IDS2 N-channel IDS output sink current 2 (for VS > 2.6 V) VDS = 0.5 V; VDD = 2.4 V 2 Fig. 18 –1.6 –8.3 – mA IDS3 N-channel IDS output sink current 3 (for VS > 3.9 V) VDS = 0.5 V; VDD = 3.6 V –3.2 –14.7 – mA |
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