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IRG4ZH70UD Datasheet(PDF) 1 Page - International Rectifier

Part No. IRG4ZH70UD
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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1
www.irf.com
Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
1200
V
IC @ TC = 25°C
Continuous Collector Current
78
IC @ TC = 100°C
Continuous Collector Current
42
ICM
Pulsed Collector Current Œ
312
ILM
Clamped Inductive Load Current 
312
IF @ TC = 100°C
Diode Continuous Forward Current
42
IFM
Diode Maximum Forward Current
312
VGE
Gate-to-Emitter Voltage
± 20
V
PD @ TC = 25°C
Maximum Power Dissipation
350
PD @ TC = 100°C
Maximum Power Dissipation
140
TJ
Operating Junction and
-55 to + 150
°C
TSTG
Storage Temperature Range
IRG4ZH70UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
VCES = 1200V
VCE(ON)typ = 2.23V
@VGE = 15V, IC = 42A
Surface Mountable
UltraFast CoPack IGBT
q
UltraFast IGBT optimized for high switching frequencies
q
IGBT co-packaged with HEXFRED
ultrafast,
ultra-soft recovery antiparallel diodes for use in
bridge configurations
q
Low Gate Charge
q
Low profile low inductance SMD-10 Package
q
Separated control & Power-connections for
easy paralleling
q
Inherently good coplanarity
q
Easy solder inspection and cleaning
Benefits
q
Highest power density and efficiency available
q
HEXFRED Diodes optimized for performance with IGBTs.
Minimized recovery characteristics
q
IGBTs optimized for specific application conditions
q
High input impedance requires low gate drive power
q
Less noise and interference
C
n-channel
E
G
E(k)
Absolute Maximum Ratings
W
Parameter
Min.
Typ.
Max.
Units
RθJC
Junction-to-Case - IGBT
0.36
RθJC
Junction-to-Case - Diode
0.69
°C/W
RθCS
SMD-10 Case-to-Heatsink (typical), *
0.44
Wt
Weight
6.0(0.21)
g (oz)
Thermal Resistance
PD - 9.1627A
* Assumes device soldered to 3.0 oz. Cu on 3.0mm IMS/Aluminum board, mounted to flat, greased heatsink.
A
SMD-10




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