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IRG4ZH70UD Datasheet(PDF) 2 Page - International Rectifier

Part No. IRG4ZH70UD
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRG4ZH70UD
2
www.irf.com
Notes:
ΠRepetitive rating: VGE = 20V; pulse width limited by maximum junction
temperature (figure 20)
 VCC = 80% (VCES), VGE = 20V, L =10µH, RG = 5.0Ω (figure 19)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage Ž
1200
V
VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
1.20
V/°C
VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage
2.23
3.5
IC = 42A
VGE = 15V
2.58
V
IC = 78A
see figures 2, 5
2.15
IC = 42A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0
6.0
VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-13
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance 
30
46
S
VCE = 100V, IC = 42A
ICES
Zero Gate Voltage Collector Current
250
µA
VGE = 0V, VCE = 1200V
10
mA
VGE = 0V, VCE = 1200V, TJ = 150°C
VFM
Diode Forward Voltage Drop
2.45
3.7
V
IC = 42A
see figure 13
2.40
IC = 42A, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
±100
nA
VGE = ±20V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
390
590
IC = 42A
Qge
Gate - Emitter Charge (turn-on)
47
71
nC
VCC = 400V
see figure 8
Qgc
Gate - Collector Charge (turn-on)
120
180
VGE = 15V
td(on)
Turn-On Delay Time
100
TJ = 25°C
tr
Rise Time
28
ns
IC = 42A, VCC = 800V
td(off)
Turn-Off Delay Time
271
400
VGE = 15V, RG = 5.0Ω
tf
Fall Time
189
280
Energy losses include "tail" and
Eon
Turn-On Switching Loss
3.0
diode reverse recovery.
Eoff
Turn-Off Switching Loss
3.67
mJ
see figures 9, 10, 18
Ets
Total Switching Loss
6.67
9.8
td(on)
Turn-On Delay Time
37
TJ = 150°C,
see figures 11, 18
tr
Rise Time
124
ns
IC = 42A, VCC = 800V
td(off)
Turn-Off Delay Time
200
VGE = 15V, RG = 5.0Ω
tf
Fall Time
435
Energy losses include "tail" and
Ets
Total Switching Loss
12.36
mJ
diode reverse recovery.
LE
Internal Emitter Inductance
2.0
nH
Cies
Input Capacitance
7090
VGE = 0V
Coes
Output Capacitance
420
pF
VCC = 30V
see figure 7
Cres
Reverse Transfer Capacitance
56
ƒ = 1.0MHz
trr
Diode Reverse Recovery Time
107
160
ns
TJ = 25°C see figure
160
240
TJ = 125°C
14
IF = 42A
Irr
Diode Peak Reverse Recovery Current
10
15
A
TJ = 25°C see figure
—16
24
TJ = 125°C
15
VR = 200V
Qrr
Diode Reverse Recovery Charge
680 1020
nC
TJ = 25°C see figure
1400 2100
TJ = 125°C
16
di/dt = 200Aµs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
250
A/µs
TJ = 25°C see figure
During tb
320
TJ = 125°C
17
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Ž Pulse width
≤ 80µs; duty factor ≤ 0.1%.
 Pulse width 5.0µs, single shot.




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