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TBB1010 Datasheet(PDF) 6 Page - Renesas Technology Corp

Part # TBB1010
Description  Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

TBB1010 Datasheet(HTML) 6 Page - Renesas Technology Corp

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TBB1010
Rev.2, Feb. 2003, page 6 of 10
400
300
200
100
0
50
100
150
200
0
1
234
5
25
20
15
10
5
V
= 4 V
V
= V
G2S
G1
DS
25
20
15
10
5
0
1
234
5
50
40
30
20
10
0
12
34
5
V
= 5 V
R
= 120 k
Ω
DS
G
Ambient Temperature
Ta (
°C)
Maximum Channel Power
Dissipation Curve
Typical Output Characteristics
Drain to Source Voltage
V
(V)
DS
Drain Current vs. Gate1 Voltage
Gate1 Voltage
V
(V)
G1
2 V
V
= 1 V
G2S
4 V
3 V
* Value on the glass epoxy board (50mm
× 40mm × 1mm)
150
kΩ
180
kΩ
Gate1 Voltage
V
(V)
G1
Forward Transfer Admittance
vs. Gate1 Voltage
V
= 1 V
G2S
4 V
3 V
2 V
V
= 5 V
R
= 120 k
Ω
f = 1 kHz
DS
G


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