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PDTA123ES Datasheet(PDF) 5 Page - NXP Semiconductors |
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PDTA123ES Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 14 page 2004 Aug 02 5 Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 2.2 k Ω, R2 = 2.2 kΩ PDTA123E series THERMAL CHARACTERISTICS Notes 1. Refer to standard mounting conditions. 2. Reflow soldering is the only recommended soldering method. 3. Refer to SOT883 standard mounting conditions; FR4 with 60 µm copper strip line. CHARACTERISTICS Tamb =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient Tamb ≤ 25 °C SOT54 note 1 250 K/W SOT23 note 1 500 K/W SOT346 note 1 500 K/W SOT323 note 1 625 K/W SOT416 note 1 830 K/W SOT490 notes 1 and 2 500 K/W SOT883 notes 2 and 3 500 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector-base cut-off current VCB = −50 V; IE =0A −−−100 nA ICEO collector-emitter cut-off current VCE = −30 V; IB =0A −−−1 µA VCE = −30 V; IB = 0 A; Tj = 150 °C −−−50 µA IEBO emitter-base cut-off current VEB = −5 V; IC =0A −−−2mA hFE DC current gain VCE = −5 V; IC = −20 mA 30 −− VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA −−−150 mV Vi(off) input-off voltage IC = −1 mA; VCE = −5V −−1.2 −0.5 V Vi(on) input-on voltage IC = −20 mA; VCE = −0.3 V −2 −1.6 − V R1 input resistor 1.54 2.2 2.86 k Ω resistor ratio 0.8 1 1.2 Cc collector capacitance IE =ie = 0 A; VCB = −10 V; f = 1 MHz −− 3pF R2 R1 -------- |
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