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PDTA123ES Datasheet(PDF) 5 Page - NXP Semiconductors

Part # PDTA123ES
Description  PNP resistor-equipped transistors
Download  14 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PDTA123ES Datasheet(HTML) 5 Page - NXP Semiconductors

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2004 Aug 02
5
Philips Semiconductors
Product specification
PNP resistor-equipped transistors;
R1 = 2.2 k
Ω, R2 = 2.2 kΩ
PDTA123E series
THERMAL CHARACTERISTICS
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60
µm copper strip line.
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
Tamb ≤ 25 °C
SOT54
note 1
250
K/W
SOT23
note 1
500
K/W
SOT346
note 1
500
K/W
SOT323
note 1
625
K/W
SOT416
note 1
830
K/W
SOT490
notes 1 and 2
500
K/W
SOT883
notes 2 and 3
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB = −50 V; IE =0A
−−−100
nA
ICEO
collector-emitter cut-off current
VCE = −30 V; IB =0A
−−−1
µA
VCE = −30 V; IB = 0 A; Tj = 150 °C
−−−50
µA
IEBO
emitter-base cut-off current
VEB = −5 V; IC =0A
−−−2mA
hFE
DC current gain
VCE = −5 V; IC = −20 mA
30
−−
VCEsat
collector-emitter saturation voltage
IC = −10 mA; IB = −0.5 mA
−−−150
mV
Vi(off)
input-off voltage
IC = −1 mA; VCE = −5V
−−1.2
−0.5
V
Vi(on)
input-on voltage
IC = −20 mA; VCE = −0.3 V
−2
−1.6
V
R1
input resistor
1.54
2.2
2.86
k
resistor ratio
0.8
1
1.2
Cc
collector capacitance
IE =ie = 0 A; VCB = −10 V;
f = 1 MHz
−−
3pF
R2
R1
--------


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