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BTB12-800CW Datasheet(PDF) 2 Page - STMicroelectronics

Part # BTB12-800CW
Description  12A TRIACS
Download  7 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BTB12-800CW Datasheet(HTML) 2 Page - STMicroelectronics

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BTA/BTB12 and T12 Series
2/7
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
s
SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)
s
STANDARD (4 Quadrants)
STATIC CHARACTERISTICS
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
Symbol
Test Conditions
Quadrant
T12
BTA/BTB12
Unit
T1235
TW
SW
CW
BW
IGT (1)
VD = 12 V
RL = 30 Ω
I - II - III
MAX.
35
5
10
35
50
mA
VGT
I - II - III
MAX.
1.3
V
VGD
VD = VDRM RL = 3.3 kΩ
Tj = 125°C
I - II - III
MIN.
0.2
V
IH (2)
IT = 100 mA
MAX.
3510
15
3550
mA
IL
IG = 1.2 IGT
I - III
MAX.
50
10
25
50
70
mA
II
60
15
30
60
80
dV/dt (2)
VD = 67 %VDRM gate open
Tj = 125°C
MIN.
500
20
40
500
1000
V/µs
(dI/dt)c (2) (dV/dt)c = 0.1 V/µs
Tj = 125°C
MIN.
-
3.5
6.5
-
-
A/ms
(dV/dt)c = 10 V/µs
Tj = 125°C
-
1
2.9
-
-
Without snubber
Tj = 125°C
6.5
-
-
6.5
12
Symbol
Test Conditions
Quadrant
BTA/BTB12
Unit
CB
IGT (1)
VD = 12 V
RL = 30 Ω
I - II - III
IV
MAX.
25
50
50
100
mA
VGT
ALL
MAX.
1.3
V
VGD
VD = VDRM RL = 3.3 kΩ Tj = 125°C
ALL
MIN.
0.2
V
IH (2)
IT = 500 mA
MAX.
25
50
mA
IL
IG = 1.2 IGT
I - III - IV
MAX.
40
50
mA
II
80
100
dV/dt (2)
VD = 67 %VDRM gate open Tj = 125°C
MIN.
200
400
V/µs
(dV/dt)c (2) (dI/dt)c = 5.3 A/ms
Tj = 125°C
MIN.
5
10
V/µs
Symbol
Test Conditions
Value
Unit
VT (2)
ITM = 17 A
tp = 380 µs
Tj = 25°C
MAX.
1.55
V
Vto (2)
Threshold voltage
Tj = 125°C
MAX.
0.85
V
Rd (2)
Dynamic resistance
Tj = 125°C
MAX.
35
m
IDRM
IRRM
VDRM = VRRM
Tj = 25°C
MAX.
5µA
Tj = 125°C
1
mA


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