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IDT7014S12PF Datasheet(PDF) 7 Page - Integrated Device Technology |
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IDT7014S12PF Datasheet(HTML) 7 Page - Integrated Device Technology |
7 / 9 page 6.42 IDT7014S/L High-Speed 4K x 9 Dual-Port Static RAM Industrial and Commercial Temperature Ranges 7 AC Electrical Characteristics Over the Operating Temperature and Supply Voltage NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2). 2. This parameter is guaranteed by device characterization, but is not production tested. 3. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage and temperature, the actual tDH will always be smaller than the actual tOW. 4. Port-to-port delay through RAM cells from writing port to reading port, refer to “Timing Waveform of Write With Port-to-Port Read”. Symbol Parameter 7014S12 Com'l Only 7014S15 Com'l & Ind Unit Min. Max. Min. Max. WRITE CYCLE tWC Write Cycle Time 12 ____ 15 ____ ns tAW Address Valid to End-of-Write 10 ____ 14 ____ ns tAS Address Set-up Time 0 ____ 0 ____ ns tWP Write Pulse Width 10 ____ 12 ____ ns tWR Write Recovery Time 1 ____ 1 ____ ns tDW Data Valid to End-of-Write 8 ____ 10 ____ ns tHZ Output High-Z Time(1,2) ____ 7 ____ 7ns tDH Data Hold Time(3) 0 ____ 0 ____ ns tWZ Write Enable to Output in High-Z(1,2) ____ 7 ____ 7ns tOW Output Active from End-of-Write(1,2,3) 0 ____ 0 ____ ns tWDD Write Pulse to Data Delay (4) ____ 25 ____ 30 ns tDDD Write Data Valid to Read Data Delay (4) ____ 22 ____ 25 ns 2528 tbl 09a Symbol Parameter 7014S20 Com'l & Ind 7014S25 Com'l & Ind Unit Min. Max. Min. Max. WRITE CYCLE tWC Write Cycle Time 20 ____ 25 ____ ns tAW Address Valid to End-of-Write 15 ____ 20 ____ ns tAS Address Set-up Time 0 ____ 0 ____ ns tWP Write Pulse Width 15 ____ 20 ____ ns tWR Write Recovery Time 2 ____ 2 ____ ns tDW Data Valid to End-of-Write 12 ____ 15 ____ ns tHZ Output High-Z Time(1,2) ____ 9 ____ 11 ns tDH Data Hold Time (3) 0 ____ 0 ____ ns tWZ Write Enable to Output in High-Z (1,2) ____ 9 ____ 11 ns tOW Output Active from End-of-Write(1,2,3) 0 ____ 0 ____ ns tWDD Write Pulse to Data Delay(4) ____ 40 ____ 45 ns tDDD Write Data Valid to Read Data Delay (4) ____ 30 ____ 35 ns 2528 tbl 09b |
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