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BTB12 Datasheet(PDF) 5 Page - STMicroelectronics

Part # BTB12
Description  12A TRIACS
Download  7 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BTB12 Datasheet(HTML) 5 Page - STMicroelectronics

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BTA/BTB12 and T12 Series
5/7
Fig. 4:
On-state characteristics (maximum
values).
Fig. 5: Surge peak on-state current versus
number of cycles.
Fig. 6:
Non-repetitive
surge peak on-state
current
for
a
sinusoidal
pulse
with
width
tp < 10ms, and corresponding value of I²t.
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 8-1: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values) (BW/CW/T1235).
Fig. 8-2: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values) (TW).
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1
10
100
ITM (A)
Tj=25°C
Tj max
Tj max.
Vto = 0.85 V
Rd = 35 m
VTM(V)
1
10
100
1000
0
10
20
30
40
50
60
70
80
90
100
110
120
130
ITSM (A)
Non repetitive
Tj initial=25°C
Repetitive
Tc=90°C
One cycle
t=20ms
Number of cycles
0.01
0.10
1.00
10.00
10
100
1000
tp (ms)
ITSM (A), I²t (A²s)
Tj initial=25°C
ITSM
I²t
dI/dt limitation:
50A/µs
-40
-20
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
IGT
IH & IL
Tj(°C)
0.1
1.0
10.0
100.0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
BW/CW/T1235
C
B
SW
(dV/dt)c (V/µs)
0.1
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
10.0
100.0
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
TW
(dV/dt)c (V/µs)


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