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STB80NF10T4 Datasheet(PDF) 5 Page - STMicroelectronics |
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STB80NF10T4 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 14 page STP80NF10 - STB80NF10 Electrical characteristics 5/14 Table 5. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 50V, ID= 40A, RG =4.7Ω, VGS=10V (see Figure 14) 26 80 116 60 ns ns ns ns Table 6. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 80 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 320 A VSD (2) 2. Pulsed:pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD = 80A, VGS = 0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=80A, VDD = 50V di/dt = 100A/µs,Tj=150°C 106 450 8.5 ns nC A |
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