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IRGPS40B120UDP Datasheet(PDF) 2 Page - International Rectifier

Part No. IRGPS40B120UDP
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRGPS40B120UDP
2
www.irf.com
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig.
5, 6
7, 9
10
11
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
1200 –––
–––
V
VGE = 0V, IC = 500µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.40 ––– V/°C
VGE = 0V, IC = 1.0mA, (25°C-125°C)
VCE(on)
Collector-to-Emitter Saturation Voltage
–––
3.12 3.40
IC = 40A
VGE = 15V
–––
3.39 3.70
V
IC = 50A
–––
3.88 4.30
IC = 40A, TJ = 125°C
–––
4.24 4.70
IC = 50A, TJ = 125°C
VGE(th)
Gate Threshold Voltage
4.0
5.0
6.0
VCE = VGE, IC = 250µA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage –––
-12
––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-125°C)
gfe
Forward Transconductance
–––
30.5
–––
S
VCE = 50V, IC = 40A, PW=80µs
ICES
Zero Gate Voltage Collector Current
–––
–––
500
µA
VGE = 0V, VCE = 1200V
–––
420 1200
VGE = 0V, VCE = 1200V, TJ = 125°C
VFM
Diode Forward Voltage Drop
–––
2.03 2.40
IC = 40A
–––
2.17 2.60
V
IC = 50A
–––
2.26 2.68
IC = 40A, TJ = 125°C
–––
2.46 2.95
IC = 50A, TJ = 125°C
IGES
Gate-to-Emitter Leakage Current
–––
––– ±100
nA
VGE = ±20V
9,10
11 ,12
8
Ref.Fig.
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
–––
340
510
IC = 40A
Qge
Gate - Emitter Charge (turn-on)
–––
40
60
nC
VCC = 600V
Qgc
Gate - Collector Charge (turn-on)
–––
165
248
VGE = 15V
Eon
Turn-On Switching Loss
––– 1400 1750
µJ
IC = 40A, VCC = 600V
Eoff
Turn-Off Switching Loss
––– 1650 2050
VGE = 15V,RG = 4.7Ω, L =200µH
Etot
Total Switching Loss
––– 3050 3800
Ls = 150nH
TJ = 25°C
Eon
Turn-On Switching Loss
––– 1950 2300
TJ = 125°C
Eoff
Turn-Off Switching Loss
––– 2200 2950
µJ
Energy losses include "tail" and
Etot
Total Switching Loss
–––
4150 5250
diode reverse recovery.
td(on)
Turn-On Delay Time
–––
76
99
IC = 40A, VCC = 600V
tr
Rise Time
–––
39
55
VGE = 15V, RG = 4.7Ω L =200µH
td(off)
Turn-Off Delay Time
–––
332
365
ns
Ls = 150nH, TJ = 125°C
tf
Fall Time
–––
25
33
Cies
Input Capacitance
––– 4300 –––
VGE = 0V
Coes
Output Capacitance
–––
330
–––
pF
VCC = 30V
Cres
Reverse Transfer Capacitance
–––
160
–––
f = 1.0MHz
TJ = 150°C, IC = 160A, Vp =1200V
VCC = 1000V, VGE = +15V to 0V
RG = 4.7Ω
TJ = 150°C, Vp =1200V
VCC = 900V, VGE = +15V to 0V,
RG = 4.7Ω
Erec
Reverse Recovery energy of the diode
––– 3346 –––
µJ
TJ = 125°C
trr
Diode Reverse Recovery time
–––
180
–––
ns
VCC = 600V, IF = 60A, L =200µH
Irr
Diode Peak Reverse Recovery Current
–––
50
–––
A
VGE = 15V,RG = 4.7Ω, Ls = 150nH
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
23
CT1
CT4
WF1
WF2
13,15
14, 16
CT4
WF1
WF2
22
4
CT2
CT3
WF4
17,18,19
20, 21
CT4,WF3
RBSOA
Reverse Bias Safe Operting Area
FULL SQUARE
SCSOA
Short Circuit Safe Operting Area
10
–––
–––
µs




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